Overlay target for polarized light lithography

ABSTRACT

A target and method for use in polarized light lithography. A preferred embodiment comprises a first structure located on a reference layer, wherein the first structure is visible through a second layer, and a second structure located on the second layer, wherein the second structure is formed from a photomask containing a plurality of sub-structures oriented in a first orientation, wherein a polarized light is used to pattern the second structure onto the second layer, and wherein a polarization of the polarized light is the same as the orientation of the plurality of sub-structures. The position, size, and shape of the second structure is dependent upon a polarity of the polarized light, permitting a single design for an overlay target to be used with different polarities of polarized light.

TECHNICAL FIELD

The present invention relates generally to integrated circuit waferfabrication, and more particularly to an overlay target and a method foruse in polarized light lithography.

BACKGROUND

The fabrication of integrated circuits on semiconductor wafers typicallyinvolves the creation of multiple, successive layers of materials, suchas insulators, conductors, semiconductors, and so forth, on thesemiconductor wafers. Each of the layers is normally formed by applyinga photoresist layer over previously formed layers and then thephotoresist layer is patterned. Portions of the photoresist layer notexposed during the patterning can be washed off and the layer can beformed using one of many desired techniques. When completed properly,the multiple layers combine to form functional integrated circuits. Thealignment of the individual layers is crucial to creating properlyformed structures in the semiconductor wafer. Misalignment of the layerscan reduce the performance of the integrated circuitry if themisalignment is small (due to improper device geometries) and inoperableintegrated circuitry if the misalignment is large (due to formation ofimproper electrical connections).

Misalignment of the layers can arise when a photomask is used to patterna layer and the photomask is not lined up properly with previouslycreated layers on the semiconductor wafer. Misalignment can be due tomechanical shift errors, optical lens magnification errors, optical lensaberration errors, and so forth. Mechanical shift errors can be theresult of shifts in the semiconductor wafer and/or the photomask duringprocessing and optical lens magnification errors can be a result ofmagnification mismatches between different layers of the semiconductorwafer. Optical lens aberration errors can be the result of non-idealcharacteristics of an optical lens being used, wherein light passingthrough the lens behaves differently depending upon the portion of thelens the light is passing through.

Overlay targets have been used to allow for the alignment of theindividual layers of a semiconductor wafer. After a photoresist layerhas been patterned (and before the actual layer has been created) on topof the semiconductor wafer, which can have one or more targets, anoptical system, such as a part of an overlay metrology tool, can captureimages of the targets along with corresponding bullets (a part of thephotoresist layer corresponding to the overlay target) in thephotoresist layer and optical analysis algorithms can determine if thephotoresist layer is aligned within specifications with respect to thesemiconductor wafer. If the photoresist layer being created isdetermined to be misaligned, the photoresist layer can be removed,usually using a chemical wash, and a new photoresist layer can beapplied and patterned and the optical processing can be repeated untilthe photoresist layer becomes aligned.

One disadvantage of the prior art is that the overlay targets can beused to detect mechanical shift errors and lens magnification errors.However, lens aberrations can also result in significant misalignmenterrors and the prior art overlay targets do not adequately capture lensaberration errors.

A second disadvantage of the prior art is that the overlay targets donot exploit the advantages of using polarized light.

Yet another disadvantage of the prior art is that the overlay targetstypically comprise the photoresist layer and a layer immediately beneathit. The use of adjacent layers can permit a sequential build-up ofmisalignment that, while between the adjacent layers is withinspecifications, can lead to an overall misalignment that exceedsspecifications.

SUMMARY OF THE INVENTION

These and other problems are generally solved or circumvented, andtechnical advantages are generally achieved, by preferred embodiments ofthe present invention which provides an overlay target and a method foruse in polarized light lithography.

In accordance with a preferred embodiment of the present invention, anoverlay target for use in aligning layers of a semiconductor wafer isprovided. The overlay target includes a first structure located on areference layer and a second structure located on a second layer. Thefirst structure is visible through the second layer. The secondstructure is formed from a photomask containing a plurality ofsub-structures, with all sub-structures in the plurality ofsub-structures oriented in a first orientation. A polarized light isused to pattern the second structure onto the second layer and thepolarized light has a polarization that is the same as the firstorientation.

In accordance with another preferred embodiment of the presentinvention, a mask for forming a bullet portion of an overlay target isprovided. The mask includes a first structure and a second structure.The first structure includes a first plurality of sub-structures, alloriented along a first orientation. The second structure includes asecond plurality of sub-structures, all oriented along a secondorientation. The second orientation is different from the firstorientation.

In accordance with another preferred embodiment of the presentinvention, a method for aligning a photomask is provided. The methodincludes applying a polarized light with a specific orientation on thephotomask to pattern a photoresist layer on a semiconductor substrate,determining an alignment by processing image data of structures on thephotoresist layer and a structure on a reference layer. The methodfurther includes if the photomask and the reference layer aremisaligned, stripping the photoresist layer and moving the photomask. Atleast one of the structures on the photomask becomes opaque to thepolarized light if the specific orientation of the polarized light isorthogonal to an orientation of the structures on the photomask.

An advantage of a preferred embodiment of the present invention is thatthe overlay target can be used to measure layer misalignments due tomechanical shifts, lens magnification errors, and lens aberrationerrors.

A further advantage of a preferred embodiment of the present inventionis that the overlay target can be used with a single reference layer.This can simplify overlay target design and use. Furthermore, the use ofa single reference layer can result in more accurate layer alignmentsince layer misalignment is not allowed to build up through successivelayers.

Yet another advantage of a preferred embodiment of the present inventionis that the overlay target can be used with layers formed with bothhorizontal and vertical polarized light. This can simplify overlaytarget design and use since a single overlay target can be used, ratherthan requiring multiple overlay target designs.

The foregoing has outlined rather broadly the features and technicaladvantages of the present invention in order that the detaileddescription of the invention that follows may be better understood.Additional features and advantages of the invention will be describedhereinafter which form the subject of the claims of the invention. Itshould be appreciated by those skilled in the art that the conceptionand specific embodiments disclosed may be readily utilized as a basisfor modifying or designing other structures or processes for carryingout the same purposes of the present invention. It should also berealized by those skilled in the art that such equivalent constructionsdo not depart from the spirit and scope of the invention as set forth inthe appended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention, and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings, in which:

FIGS. 1 a and 1 b are diagrams of prior art overlay targets;

FIG. 2 is a diagram of a composite mask for forming an overlay target,according to a preferred embodiment of the present invention;

FIGS. 3 a through 3 c are diagrams of the overlay target of FIG. 2 ascreated on multiple layers of an integrated circuit, according to apreferred embodiment of the present invention;

FIG. 4 is a diagram of a composite mask for forming an alternate overlaytarget, according to a preferred embodiment of the present invention;and

FIG. 5 is a diagram of an algorithm for aligning layers using theoverlay target of FIG. 2 and FIG. 4, according to a preferred embodimentof the present invention.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The making and using of the presently preferred embodiments arediscussed in detail below. It should be appreciated, however, that thepresent invention provides many applicable inventive concepts that canbe embodied in a wide variety of specific contexts. The specificembodiments discussed are merely illustrative of specific ways to makeand use the invention, and do not limit the scope of the invention.

The present invention will be described with respect to preferredembodiments in a specific context, namely semiconductor fabricationusing polarized light lithography. The invention may also be applied,however, to other semiconductor fabrications techniques involvinglithography, including those using non-polarized light.

With reference now to FIGS. 1 a and 1 b, there are shown diagramsillustrating exemplary prior art overlay targets. The diagram shown inFIG. 1 a illustrates a first prior art overlay target 100. The firstoverlay target 100 comprises a frame 105 formed on a first layer and abox 110 formed on a second layer. The box 110 is commonly referred to asa bullet. If the first layer and the second layer were perfectlyaligned, the box 110 would be centered (both horizontally andvertically) inside the frame 105. Any misalignment present between thefirst layer and the second layer would result in the box 110 not beingcentered inside the frame 105, such as shifted box 111, which shows thatthe second layer has been shifted to the left and slightly up withrespect to the first layer. The diagram shown in FIG. 1 b illustrates asecond prior art overlay target 120. The second overlay target 120comprises an incomplete outer frame 125 made up of four sides 126 formedon a first layer and an incomplete inner frame 130 made up of four sides131. Similar to the first prior art overlay target 100, if the firstlayer and the second layer were aligned properly, then the incompleteouter frame and the incomplete inner frame would be centered. A shiftedincomplete inner frame 132 made up of four sides 133 shows that thesecond layer has been shifted to the left and down with respect to thefirst layer.

There are many algorithms using optical image processing techniques thatcan be used to determine if layers are misaligned using overlay targets.These algorithms either make use of image (intensity) based techniquesor diffraction based techniques to determine the presence ofmisalignment between layers. Image based techniques involve capturing animage of the overlay target and then applying an algorithm to processthe image to determine the positional relationship of components of theoverlay target, such as the frame 105 and the box 110 of the overlaytarget 100 (FIG. 1 a). Diffraction based techniques involve a scanningof the overlay target with a light source, typically a laser, andcapturing scattered light. An algorithm can then be used to process thescattered light and determine the positional relationship of componentsin the overlay target. The algorithms and techniques used to determinemisalignment are considered to be well understood by those of ordinaryskill in the art of the present invention and will not be discussedfurther herein.

The use of immersion technology, wherein a liquid with desired opticalproperties is placed between imaging equipment and the semiconductorwafer, has permitted conventional lithography to create integratedcircuit feature sizes on the order of 40 nanometers and below withouthaving to shorten the wavelength of the light used in the lithographyprocess. When polarized light is used, additional imaging contrast canbe provided to increase the depth of field and permit the formation ofeven smaller feature sizes.

With reference now to FIG. 2, there is shown a diagram illustrating acomposite mask for forming an overlay target 200 for use in thefabrication of integrated circuits using polarized light lithography,according to a preferred embodiment of the present invention. Thecomposite mask can illustrate portions of photomasks used to createdifferent layers of the integrated circuit in a single diagram tosimplify discussion. The composite mask shows an overlay target 200comprising a frame 205 that can be formed on a reference layer. Theportion of a photomask used to form the frame 205 may be a part of aphotomask that is used to pattern photoresist used to form the referencelayer.

The frame 205 may be formed on a first layer created on a semiconductorsubstrate. If formed with the first layer, there is little possibilityof misalignment. The composite mask of the overlay target 200 alsocomprises a first inner frame 210 and a second inner frame 220. Thefirst inner frame 210 and the second inner frame 220 comprise the bulletportion of an overlay target. The first inner frame 210 can be formedfrom a plurality of vertically oriented components, such as a shortvertical component 212 and a long vertical component 213. The secondinner frame 220 can be formed from a plurality of horizontally orientedcomponents, such as a short horizontal component 222 and a longhorizontal component 223. The components forming the first inner frame210 and the components forming the second inner frame 220 should bealigned so that they are orthogonal with respect to one another.Although the diagram illustrates the first inner frame 210 being formedfrom vertical components and the second inner frame 220 being formedfrom horizontal components, the first inner frame 210 may be formed fromhorizontal components and the second inner frame 220 may be formed fromvertical components without affecting the scope or spirit of the presentinvention.

The frame 205 can be formed on a reference layer, for example, a firstlayer formed on the semiconductor wafer, and can be used for theformation of subsequent layers, for example, layer two, layer three,layer four, and so forth. Alternatively, the frame 205 can be formed ona layer immediately preceding a layer to be formed. For example, theframe 205 can be formed on layer three and the layer to be formed willbe formed on layer four.

Depending upon a polarization of the light used in the polarized lightlithography, either the first inner frame 210 or the second inner frame220 will be patterned onto a photoresist layer, with the orientation ofthe components of the first inner frame 210 and the second inner frame220 blocking the polarized light if the polarization of the polarizedlight is orthogonal to their own orientation. For example, if thepolarized light is oriented vertically, then the first inner frame 210is patterned onto the photoresist layer since the orientation of thesecond inner frame 220 blocks the polarized light from illuminating thephotoresist layer. Therefore, the overlay target for the layer usingvertically oriented polarized light would comprise the frame 205 and thefirst inner frame 210. An optical image processing system would thencapture an image of the overlay target 200 and execute image processingalgorithms on the captured image data to determine if the layers areproperly aligned. The use of horizontally oriented polarized light(vertically oriented polarized light) in conjunction with horizontallyoriented structures (vertically oriented structures) is referred to asTE polarization or S polarization.

According to a preferred embodiment of the present invention, dimensions(such as width and pitch) of the components of the first inner frame 210and the second inner frame 220 should be kept close to design rules ofthe layer being patterned. For example, for use in patterning a polylayer in a 45 nanometer fabrication process, the components should havea width of about 60 nanometers and a pitch of about 140 nanometers. Thewidth and/or pitch of the components can differ depending upon the layerbeing patterned as well as the fabrication technology.

With reference now to FIGS. 3 a through 3 c, there are shown diagramsillustrating views of the overlay target 200 (FIG. 2) created withpolarized light of different orientations, according to a preferredembodiment of the present invention. The diagram shown in FIG. 3 aillustrates a view 300 of the overlay target 200 when polarized lightwith a vertical orientation is used in the patterning of a layer. Whenvertically oriented polarized light is used with the overlay target 200,the view 300 is seen by optical processing equipment used to alignlayers. The optical processing equipment sees the frame 205 and thefirst inner frame 210 with its vertical components since the secondinner frame 220 was not patterned. The diagram shown in FIG. 3 billustrates a view 350 of the overlay target 200 when polarized lightwith a horizontal orientation is used in the patterning of a layer. Whenhorizontally oriented polarized light is used with the overlay target,the view 350 is seen by optical processing equipment used to alignlayers. The optical processing equipment sees the frame 205 and thesecond inner frame 210 with its horizontal components.

If unpolarized light (or polarized light with an orientation other thanvertical or horizontal) were used in the patterning of a layer, then theoptical processing equipment would see both the first inner frame 210and the second inner frame 220 as well as the frame 205, since both thefirst inner frame 210 and the second inner frame 220 would have beenpatterned onto the photoresist. The presence of both inner frames doesnot necessarily hurt the performance of the alignment process, althoughadditional compensation may need to take place to properly process theadditional optical information.

Additionally, both horizontally oriented and vertically oriented lightcan be used in the patterning of a layer. A view 375, shown in FIG. 3 c,illustrates that the optical processing equipment will see the frame 205as well as both the first inner frame 210 and the second inner frame220. The exposure of the photoresist can occur sequentially (forexample, a first exposure with the horizontally oriented polarized lightfollowed with a second exposure with the vertically oriented polarizedlight) or simultaneously with both the horizontally oriented polarizedlight and the vertically oriented polarized light being on at the sametime. One technique of simultaneously using both horizontally orientedand vertically oriented polarized light is commonly referred to asquadrupole illumination. Other illumination schemes for simultaneousexposure of horizontally oriented polarized light and verticallyoriented polarized light are possible.

When both the first inner frame 210 and the second inner frame 220 are apart of the overlay target, it is possible to measure the presence ofshifts in the overlay target by comparing the relative positions of thefirst inner frame 210 to the second inner frame 220 in addition tocomparing their relative positions to the frame 205.

The use of both horizontally oriented polarized light and verticallyoriented polarized light can be used to detect overlay shifts induced bylens aberrations. When both orientations of polarized light are used,such as in a double exposure scheme, tool induced shifts may occurbetween the exposure of the horizontally oriented polarized light andthe vertically oriented polarized light. The presence of these shiftscan be detected by comparing the first inner frame 210 and the secondinner frame 220.

With reference now to FIG. 4, there is shown a diagram illustrating acomposite mask for forming an alternate overlay target 400, according toa preferred embodiment of the present invention. The composite mask forthe overlay target 400 comprises a frame 405, an inner frame 410, and aninner box 420. The frame 405 can be formed on a reference layer, such asa first layer created on a semiconductor wafer, or on any layer createdprior to a layer that makes use of the overlay target 400. The innerframe 410 can be formed from a plurality of vertically orientedcomponents, such as a short vertical component 412 and a long verticalcomponent 413. The inner box 420 can be formed from a plurality ofhorizontal components, such as horizontal component 422, with eachcomponent having substantially the same dimensions. The componentsforming the inner frame 410 and the components forming the inner box 420should be aligned so that they are orthogonal with respect to oneanother. Although the diagram illustrates the inner frame 410 beingformed from vertical components and the inner box 420 being formed fromhorizontal components, the inner frame 410 may be formed from horizontalcomponents and the inner box 420 may be formed from vertical componentswithout affecting the scope or spirit of the present invention. For usein patterning a poly layer in a 45 nanometer fabrication process, thecomponents of the inner frame 410 and the inner box 420 should have awidth of about 60 nanometers and a pitch of about 140 nanometers. Thewidth and/or pitch of the components can differ depending upon the layerbeing patterned as well as the fabrication technology.

As in the overlay target 200 (FIG. 2), with the overlay target 400, thenature of the polarized light in the lithography determines the use ofthe inner frame 410 or the inner box 420. As shown in FIG. 4, ifvertically oriented polarized light was used in the lithography process,then the inner frame 410 would be patterned onto the photoresist layer,and the inner box 420 would be patterned onto the photoresist layer ifhorizontally oriented polarized light was used in the lithographyprocess. If unpolarized light (or polarized light with orientation otherthan vertical or horizontal) were used in the lithography process, thenboth the inner frame 410 and the inner box 420 would be patterned ontothe photoresist layer and both can be used in the alignment process.

Other embodiments of overlay targets are possible. As discussedpreviously, it is possible to switch the orientation of the componentsof the first inner frame 210 and the second inner frame 220 (both fromFIG. 2) and the inner frame 410 and the inner box 420 (both from FIG.4). However, the orientation of the components should be set so that thecomponents are orthogonal to each other. The dimensions of thecomponents can be varied. For example, with a frame or box, the widthand/or pitch of the components can vary rather than staying consistent.Additionally, if polarized light with more than two orientations are tobe used in the lithography process, then the overlay target can containmore than two inner frames or inner frames/inner boxes, with theorientation of components in the inner frames/inner boxes being set sothat they are in-line with the polarity of the polarized light.

With reference now to FIG. 5, there is shown a diagram illustrating analgorithm 500 for use of an overlay target to align layers of anintegrated circuit during fabrication, according to a preferredembodiment of the present invention. The algorithm 500 makes use of anoverlay target that contains elements that are specially designed foruse with polarized light, such as the overlay target 200 (FIG. 2) andthe overlay target 400 (FIG. 4). These overlay targets have differentportions that would be present or absent dependent upon a specificpolarization of polarized light, such as vertical or horizontal, usedduring the patterning of the photoresist layer. The algorithm 500 may bedescriptive of actions performed by a semiconductor fabrication processduring the patterning of layers on a semiconductor wafer.

The fabrication process can begin with the application of a photoresistlayer on a semiconductor substrate (block 505). The semiconductorsubstrate may or may not have other layers previously formed. Once thephotoresist layer has been applied, it can be patterned using aphotomask (block 510). The patterning may be performed using light of adesired polarity and depending upon the polarity of the light used inthe patterning, different portions of the overlay target can bepatterned on the photoresist layer. For example, referring to theoverlay target 200 (FIG. 2), if polarized light with a verticalorientation is used in the patterning of the photomask, then the firstinner frame 210 is patterned on the photoresist layer but the secondinner frame 220 is not.

After the photoresist has been patterned (block 510), an image of theoverlay target(s) can be captured (block 515). The image may be made bya portion of an overlay metrology tool. The image capture can take placein one step in a manner similar to taking a picture or the image capturecan occur using a sequential scanning process, similar to an opticalscanner moving across a field.

The image can then be processed by image processing algorithms todetermine the alignment of the layer to be fabricated, based upon areference layer (block 520). The image processing algorithm and/or imageprocessing parameters can be different based upon the nature of thepolarized light used in the patterning. For example, if the overlaytarget 200 (FIG. 2) was used in the alignment process, then the imageprocessing parameters can differ based on the orientation of thepolarized light, with the parameters changing to process a change inexpected position of an inner frame. However, if the overlay target 400(FIG. 4) was used in the alignment process, then the image processingalgorithm can differ based upon the orientation of the polarized light,with the algorithm changing to either process a frame or a box.

The image processing algorithm can provide a numerical answer thatprovides an indication of the alignment of the layer to be fabricatedwith respect to the reference layer. A decision can then be maderegarding the alignment of the layer to be fabricated (block 525). Ifthe overlay target is aligned within specifications, then thefabrication of the layer to be fabricated can be continued (block 530).This can include the etching of the photoresist patterns, the washingoff the unexposed portions of the photoresist, the deposition of thestructures in the layer to be fabricated, and so forth. After the layerto be fabricated has been completed, if additional layers are to befabricated (block 535), the fabrication process can return to block 505to initiate the fabrication of the next layer. If no more layers are tobe fabricated, then the fabrication process can terminate.

If the overlay target is not aligned within specifications, then thephotoresist layer is stripped (block 540). After the photoresist layeris removed, an adjustment can be made to the position of the photomask(block 545). The adjustment to the position of the photomask can be madebased upon the results of the image processing algorithm. Thephotoresist layer can be reapplied (block 505) and the patterning andalignment process can repeat.

In certain situations, a single layer can be patterned with multiplephotomasks. The use of polarized light and the overlay target of thepresent invention can be applicable to the use of multiple photomasks topattern a single layer. An exemplary sequence of events in the use ofmultiple photomasks to pattern a single layer can be as follows: a)align photomask #1, b) align wafer, c) pattern with a polarized light ofa first orientation, d) align photomask #2, and e) pattern with apolarized light of a second orientation, wherein the alignment of thephotomasks can be achieved using an alignment algorithm, such as thealgorithm 500 (FIG. 5).

Although the present invention and its advantages have been described indetail, it should be understood that various changes, substitutions andalterations can be made herein without departing from the spirit andscope of the invention as defined by the appended claims.

Moreover, the scope of the present application is not intended to belimited to the particular embodiments of the process, machine,manufacture, composition of matter, means, methods and steps describedin the specification. As one of ordinary skill in the art will readilyappreciate from the disclosure of the present invention, processes,machines, manufacture, compositions of matter, means, methods, or steps,presently existing or later to be developed, that perform substantiallythe same function or achieve substantially the same result as thecorresponding embodiments described herein may be utilized according tothe present invention. Accordingly, the appended claims are intended toinclude within their scope such processes, machines, manufacture,compositions of matter, means, methods, or steps.

1. A method for aligning a photomask, the method comprising: applying apolarized light with a specified orientation on the photomask to patterna photoresist layer deposited on a semiconductor substrate, wherein thephotomask comprises two or more structures, and wherein at least one ofthe structures on the photoinask becomes opaque to the polarized lightif the specified orientation is orthogonal to an orientation of thestructures; determining an alignment by processing image data of thestructures on the photoresist layer and a structure on a referencelayer; and based on a determination that the photomask and the referencelayer are misaligned, stripping the photoresist layer; and moving thephotomask.
 2. The method of claim 1, wherein the determining comprises:capturing the image data of the structures on the photoresist layer andthe structure on the reference layer; and determining a numericalindication of how well the structures on the photoresist layer arecentered in the structure on the reference layer.
 3. The method of claim2, wherein the capturing comprises taking a picture of the structures onthe photoresist layer and the structure on the reference layer.
 4. Themethod of claim 2, wherein the capturing comprises sequentially scanninga light over the structures on the photoresist layer and the structureon the reference layer.
 5. The method of claim 1, wherein an orientationof each structure on the photomask is different.
 6. The method of claim5, wherein each structure on the photomask is orthogonal to otherstructures on the photomask.
 7. The method of claim 1, wherein thestructures on the photoresist layer and the structure on the referencelayer comprise an overlay target.
 8. The method of claim 1, wherein thelayers are layers of an integrated circuit, and wherein the applying,the determining, the stripping, and the moving are performed for eachlayer in the integrated circuit.
 9. The method of claim 1, wherein thepolarized light produces both horizontally oriented polarized light andvertically oriented polarized light.
 10. The method of claim 1, furthercomprising: determining that the photomask and the reference layer arealigned; exposing portions of the photoresist layer through thephotomask; removing portions of the photoresist layer to expose anunderlying layer of the semiconductor substrate; and altering exposedportions of the semiconductor substrate.
 11. The method of claim 10,wherein altering the exposed portions of the semiconductor substratecomprises etching a layer of the semiconductor substrate.
 12. A methodfor manufacturing a semiconductor device, the method comprising:providing a semiconductor substrate having a structure thereon;providing a photomask; applying a polarized light with a specifiedorientation on the photomask to pattern a photoresist layer deposited onthe semiconductor substrate, wherein the photomask comprises two or morestructures, and wherein at least one of the structures on the photomaskbecomes opaque to the polarized light if the specified orientation isorthogonal to an orientation of the structures; determining an alignmentby processing data of the structures on the photoresist layer and thestructure on the semiconductor substrate; and based on a determinationthat the photomask and the semiconductor substrate are misaligned,stripping the photoresist layer; and moving the photomask.
 13. Themethod of claim 12, wherein the determining comprises: capturing thedata of the structures on the photoresist layer and the structure on thesemiconductor substrate; and determining a numerical indication of howwell the structures on the photoresist layer are centered in thestructure on the semiconductor substrate.
 14. The method of claim 13,wherein the capturing comprises sequentially scanning a light over thestructures on the photoresist layer and the structure on thesemiconductor substrate.
 15. The method of claim 12, wherein anorientation of each structure on the photomask is different.
 16. Themethod of claim 12, wherein the polarized light produces bothhorizontally oriented polarized light and vertically oriented polarizedlight.
 17. The method of claim 12, further comprising: determining thatthe photomask and the semiconductor substrate are aligned; exposingportions of the photoresist layer though the photomask; removingportions of the photoresist layer to expose the semiconductor substrate;and altering exposed portions of the semiconductor substrate.